Evidence for the segregation of sulfur to Ni-alumina interfaces

被引：21

作者：

Kiely, JD ^{[1
]}

Yeh, T ^{[1
]}

Bonnell, DA ^{[1
]}

机构：

[1] Univ Penn, Philadelphia, PA 19104 USA

来源：

SURFACE SCIENCE | 1997年 / 393卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

adhesion; aluminum oxide; Auger electron spectroscopy; metal-insulator interfaces; nickel; scanning tunneling microscopy; sulfur; surface segregation;

D O I：

10.1016/S0039-6028(97)00786-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The S enrichment of Ni-sapphire interfaces in the temperature range 500-800 degrees C was measured with Auger electron spectroscopy. Atomic force microscopy was used to confirm that S segregated to the interface rather than to interface voids or grain boundaries. The effects of atomic defects such as dislocations on S segregation was not determined. Maximum segregation occurred at 700 degrees C, similar to that to Ni grain boundaries. (C) 1997 Elsevier Science B.V.

引用

页码：L126 / L130

页数：5

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