Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 μm

被引：17

作者：

Diaz-Thomas, D. A. ^{[1
]}

Stepanenko, O. ^{[2
]}

Bahriz, M. ^{[1
]}

Calvez, S. ^{[2
]}

Tournie, E. ^{[1
]}

Baranov, A. N. ^{[1
]}

Almuneau, G. ^{[2
]}

Cerutti, L. ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, IES, F-34000 Montpellier, France

[2] CNRS, LAAS, 7 Ave Colonel Roche, F-31400 Toulouse, France

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 22期

关键词：

N-TYPE; TEMPERATURE; PERFORMANCE; ALSB;

D O I：

10.1364/OE.27.031425

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the impact of the growth conditions of AlGaAsSb cladding layers on the properties of interband cascade lasers (ICLs). For an optimized structure emitting at 3.3 mu m, we achieve an internal quantum efficiency of 65% per stage in good agreement with conventional ICL using InAs/AiSb superlattice cladding layers, in spite of internal losses of 15 cm(-1) due to higher optical losses in the n-type AlGaAsSb alloys. Finally, we report a narrow ridge ICL emitting at 3.33 mu m operating in continuous wave up to 80 degrees C that produces 1 mW/uncoated facet at 80 degrees C, 10 mW at 40 degrees C and more than 12 mW at 20 degrees C. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：31425 / 31434

页数：10

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