Imaging size-selected silicon clusters with a low-temperature scanning tunneling microscope

被引：39

作者：

Messerli, S ^{[1
]}

Schintke, S ^{[1
]}

Morgenstern, K ^{[1
]}

Sanchez, A ^{[1
]}

Heiz, U ^{[1
]}

Schneider, WD ^{[1
]}

机构：

[1] Univ Lausanne, Inst Phys Matiere Condensee, CH-1015 Lausanne, Switzerland

来源：

SURFACE SCIENCE | 2000年 / 465卷 / 03期

关键词：

clusters; metal-semiconductor interfaces; scanning tunneling microscopy; silicon; silver;

D O I：

10.1016/S0039-6028(00)00722-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Size-selected Si-30 and Si-39 clusters produced by a laser vaporization cluster source are deposited on the Ag(111) surface at room temperature and at liquid-nitrogen temperature respectively. Subsequently, the sample is transferred at low temperature (120 K) in a separate mobile ultrahigh vacuum chamber (vacuum-suitcase) from the cluster source to a low-temperature scanning tunneling microscope (STM). Soft landing of the supported clusters is indicated by the following observations: (i) atomic-resolution images taken at low bias voltages show transparent Si clusters and an unperturbed Ag(111) substrate; (ii) manipulation experiments on the supported clusters and subsequently taken atomic-resolution images show a defect-free Ag(lll) surface. In spite of the fact that the clusters are mass-selected in the gas phase, a statistical analysis of the STM images indicates a finite size-distribution on the support. This finding is attributed to the presence of different isomers and/or cluster orientations on the surface. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：331 / 338

页数：8

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