Imaging size-selected silicon clusters with a low-temperature scanning tunneling microscope

被引:39
作者
Messerli, S [1 ]
Schintke, S [1 ]
Morgenstern, K [1 ]
Sanchez, A [1 ]
Heiz, U [1 ]
Schneider, WD [1 ]
机构
[1] Univ Lausanne, Inst Phys Matiere Condensee, CH-1015 Lausanne, Switzerland
关键词
clusters; metal-semiconductor interfaces; scanning tunneling microscopy; silicon; silver;
D O I
10.1016/S0039-6028(00)00722-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Size-selected Si-30 and Si-39 clusters produced by a laser vaporization cluster source are deposited on the Ag(111) surface at room temperature and at liquid-nitrogen temperature respectively. Subsequently, the sample is transferred at low temperature (120 K) in a separate mobile ultrahigh vacuum chamber (vacuum-suitcase) from the cluster source to a low-temperature scanning tunneling microscope (STM). Soft landing of the supported clusters is indicated by the following observations: (i) atomic-resolution images taken at low bias voltages show transparent Si clusters and an unperturbed Ag(111) substrate; (ii) manipulation experiments on the supported clusters and subsequently taken atomic-resolution images show a defect-free Ag(lll) surface. In spite of the fact that the clusters are mass-selected in the gas phase, a statistical analysis of the STM images indicates a finite size-distribution on the support. This finding is attributed to the presence of different isomers and/or cluster orientations on the surface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:331 / 338
页数:8
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