Design of high-speed diamond microswitch

被引：12

作者：

Schmid, P ^{[1
]}

Adamschik, M ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89069 Ulm, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 03期

关键词：

D O I：

10.1088/0268-1242/18/3/310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, microswitches based on polycrystalline diamond films are investigated. Device properties such as switch-on and switch-off times are calculated and compared to measurement results obtained from fabricated structures. Pre-stress effects, common in free-standing diamond structures, have been included in the model. The influence of various geometric parameters on the transient behaviour of the switches is calculated. Diamond is shown to improve the transient behaviour of the devices in comparison with other materials such as silicon.

引用

页码：S72 / S76

页数：5

共 12 条

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