Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

被引：199

作者：

Chernikova, Anna ^{[1
]}

Kozodaev, Maksim ^{[1
]}

Markeev, Andrei ^{[1
]}

Negrov, Dmitrii ^{[1
]}

Spiridonov, Maksim ^{[1
]}

Zarubin, Sergei ^{[1
]}

Bak, Ohheum ^{[2
]}

Buraohain, Pratyush ^{[2
]}

Lu, Haidong ^{[2
]}

Suvorova, Elena ^{[1
,3
,4
]}

Gruverman, Alexei ^{[2
]}

Zenkevich, Andrei ^{[1
,5
]}

机构：

[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[3] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

[4] AV Shubnikov Crystallog Inst, Leninsky Pr 59, Moscow 119333, Russia

[5] NRNU Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 11期

基金：

俄罗斯科学基金会; 美国国家科学基金会;

关键词：

hafnium oxides; ultrathin films; ferroelectric switching CMOS integration; ferroelectric tunnel junctions; X-RAY PHOTOEMISSION; CRYSTAL-STRUCTURE; ELECTRORESISTANCE; THICKNESS; SPECTRA; ZRO2;

D O I：

10.1021/acsami.5b11653

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Because of their immense scalability and manufacturabiity potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results: represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

引用

页码：7232 / 7237

页数：6

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