Toxicology and hazards in III v MOCVD: what do we know?

被引：0
作者：
Proust, N
Picot, A
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 2002年 / 57卷 / 305期
关键词：
IIIV MOCVD; hazards; risks; arsenic; phosphorous; indium; gallium; toxicity; scrubbers;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The aim of this publication is to try to give a III V MOCVD hazard source overview. Operators can be occupationally exposed to chemical and toxic risk. After a quick introduction on industrial toxicology, hazards due to MOCVD activities are reported. Arsenic, phosphorus, gallium and indium compound toxicology is presented and give an idea of the metabolisation, the excretion, the intoxication and the associated biological monitoring. The last part of this document is dedicated to scrubbing techniques which can be used to treat the MOCVD exhaust gas stream before release to atmosphere.
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页码：582 / +
页数：21
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