Chemical solution processing and properties of (Bi,Nd)4Ti3O12 ferroelectric thin films

被引:27
作者
Hayashi, T
Iizawa, N
Togawa, D
Yamada, M
Sakamoto, W
Hirano, S
机构
[1] Shonan Inst Technol, Dept Mat Sci & Engn, Fujisawa, Kanagawa 2518511, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Ctr Integrated Res Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4A期
关键词
(Bi; Nd)(4)Ti3O12; thin film; chemical solution deposition; low-temperature crystallization; ferroelectric properties;
D O I
10.1143/JJAP.42.1660
中图分类号
O59 [应用物理学];
学科分类号
摘要
Low-temperature processing of (Bi,Nd)(4)Ti3O12 (BNT) thin films was investigated by a chemical solution deposition method, and their ferroelectric properties, crystallinity and microstructure were characterized. BNT thin films were prepared on Pt/TiOx/SiO2/Si substrates by a spin-coating technique using metal-organic, precursor solutions. The BNT precursor films crystallized into the Bi4Ti3O12 (BIT) structure above 600degreesC. The synthesized BNT films exhibited high crystallinity with low (00l) preferred orientation. BNT thin films prepared at 600degreesC showed a homogeneous and dense microstructure with a grain size of 50-100 nm. They also showed a well-saturated P-E hysteresis curve with a P-r of 7.0 muC/cm(2) and E-c of 83 kV/cm. The Nd-substitution for the Bi site in the BIT structure was found to be effective for promoting the (117) preferred-orientation and for improving the ferroelectric properties of the resultant films.
引用
收藏
页码:1660 / 1664
页数:5
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