Application of the magnetoelectric effect to exchange bias

被引:14
作者
Borisov, P. [1 ]
Eimueller, T.
Fraile-Rodriguez, A.
Hochstrat, A.
Chen, X.
Kleemann, W.
机构
[1] Univ Duisburg Essen, D-47048 Duisburg, Germany
[2] Ruhr Univ Bochum, Junior Res Grp Magnet Microscopy, D-44780 Bochum, Germany
[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
关键词
magnetoelectric effect; exchange bias; thin films; photoemission electron microscopy; chromium oxide;
D O I
10.1016/j.jmmm.2006.11.150
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Owing to its magnetoelectric properties the antiferromagnetic ( AF) domain structure of Cr2O3 can be controlled when cooling through the Neel- point in simultaneously applied magnetic and electric fields. Recently we achieved complete switching of the perpendicular exchange bias field from positive to negative values and vice versa by variation of the applied electric freezing field at constant external magnetic field in the system Cr2O3/[Co/Pt](n) [ P. Borisov, et al., Phys. Rev. Lett. 94 ( 2005) 117203]. In order to image uncompensated spins at the ferromagnetic - AF interface, X- ray photoemission electron microscopy ( X- PEEM) was performed on Cr2O3 ( 1 1 1)/ Pt/ Co/ Pt heterolayers after cooling in magnetic and electric freezing fields. The orientation of the uncompensated spins and the magnetic structure at the interface measured at the Cr and the Co L-3,L-2 absorption edges are discussed. (c) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码:2313 / 2315
页数:3
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