In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

被引：14

作者：

Kumagai, Y ^{[1
]}

Mayumi, M ^{[1
]}

Koukitu, A ^{[1
]}

Seki, H ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

关键词：

atomic layer epitaxy; cubic-GaN; GaAs substrate; in situ monitoring; gravimetric monitoring; crystalline structure; surface morphology;

D O I：

10.1016/S0169-4332(00)00120-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer epitaxy (ALE) of cubic-GaN on GaAs(001) substrates is tried by alternate supply of GaCl and NH3, and the growth process is monitored in situ using gravimetric monitoring (GM) method. It is found that one monolayer (ML)/cycle growth of a pure cubic-GaN is possible when the growth is performed at 400 degrees C on 25-nm-thick GaN buffer layer/GaAs(001) substrate. On the other hand, three-dimensional (3D) growth occurs when the growth is performed directly on GaAs substrate, and crystallinity of the grown layer is amorphous. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 81.10.Bk, 81.15.-z; 68.55.Jk.

引用

页码：427 / 431

页数：5

共 25 条

[21] Investigation of buffer layer of cubic GaN epitaxial films on (100) GaAS grown by metalorganic-hydrogen chloride vapor-phase epitaxy
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