In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

被引：14

作者：

Kumagai, Y ^{[1
]}

Mayumi, M ^{[1
]}

Koukitu, A ^{[1
]}

Seki, H ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

关键词：

atomic layer epitaxy; cubic-GaN; GaAs substrate; in situ monitoring; gravimetric monitoring; crystalline structure; surface morphology;

D O I：

10.1016/S0169-4332(00)00120-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer epitaxy (ALE) of cubic-GaN on GaAs(001) substrates is tried by alternate supply of GaCl and NH3, and the growth process is monitored in situ using gravimetric monitoring (GM) method. It is found that one monolayer (ML)/cycle growth of a pure cubic-GaN is possible when the growth is performed at 400 degrees C on 25-nm-thick GaN buffer layer/GaAs(001) substrate. On the other hand, three-dimensional (3D) growth occurs when the growth is performed directly on GaAs substrate, and crystallinity of the grown layer is amorphous. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 81.10.Bk, 81.15.-z; 68.55.Jk.

引用

页码：427 / 431

页数：5

共 25 条

[1] Halogen-transport atomic-layer epitaxy of cubic GaN monitored by in situ gravimetric method
Koukitu, A
Kumagai, Y
Taki, T
Seki, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 4980 - 4982
[2] DETERMINATION OF SURFACE CHEMICAL-SPECIES IN GAAS ATOMIC LAYER EPITAXY BY IN-SITU GRAVIMETRIC MONITORING
KOUKITU, A
TAKAHASHI, N
MIURA, Y
SEKI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (4B): : L613 - L616
[3] In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic-GaN(001)
Ramil, AM
Schmidegg, K
Bonanni, A
Sitter, H
Stifter, D
Li, SF
As, DJ
Lischka, K
THIN SOLID FILMS, 2004, 455 : 684 - 687
[4] IN-SITU OBSERVATION OF HALOGEN-TRANSPORT ATOMIC LAYER EPITAXY OF GAAS IN INERT CARRIER GAS SYSTEM
TAKAHASHI, N
YAGI, M
KOUKITU, A
SEKI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9A): : L1277 - L1280
[5] In situ monitoring of atomic layer epitaxy via optical ellipsometry
Lyzwa, F.
Marsik, P.
Roddatis, V.
Bernhard, C.
Jungbauer, M.
Moshnyaga, V.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (12)
[6] Growth evolution of cubic-GaN on sapphire (0001) substrate by metalorganic molecular beam epitaxy
Suda, J
Kurobe, T
Matsunami, H
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 437 - 440
[7] Thermodynamic analysis and in situ gravimetric monitoring of GaN decomposition
Mayumi, M
Satoh, F
Kumagai, Y
Takemoto, K
Koukitu, A
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 38 - 41
[8] In situ monitoring of the chemisorption of hydrogen atoms on (001) GaAs surface in GaAs atomic layer epitaxy
Koukitu, A
Taki, T
Takahashi, N
Seki, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (6A): : L710 - L712
[9] Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry
Dakshinamurthy, S
Bhat, I
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 521 - 526
[10] In situ gravimetric monitoring of decomposition rate from GaN epitaxial surface
Mayumi, M
Satoh, F
Kumagai, Y
Takemoto, K
Koukitu, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (7B): : L707 - L709

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