Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method

被引：0
|
作者：
Hsu, Cheng-Hsing [1 ]
Lin, Shih-Yao [1 ]
Tung, Hsin-Han [1 ]
机构：
[1] Natl United Univ, Dept Elect Engn, Kung Ching Li 36003, Miao Li, Taiwan
来源：
HIGH-PERFORMANCE CERAMICS VI | 2010年 / 434-435卷
关键词：
sol-gel method; ZrTiO(4) thin film; TEMPERATURE;
D O I：
10.4028/www.scientific.net/KEM.434-435.228
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper describes microstructure and leakage current characteristics of ZrTiO(4) thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250 degrees C for 30min at various annealing temperatures from 600 degrees C to 800 degrees C for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.
引用
收藏
页码：228 / 230
页数：3
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