Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

被引：89

作者：

Gonon, P. ^{[1
]}

Vallee, C. ^{[1
]}

机构：

[1] Univ Grenoble 1, LTM, CNRS, French Natl Res Ctr,CEA,LETI,D2NT,LTM, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-insulator-metal capacitors using high-k oxides are known to display nonlinear capacitance-voltage (C-V) characteristics. In the present work it is proposed that such nonlinearities arise from an electrode polarization mechanism. By considering a field activated hopping conduction in the bulk (related to oxygen vacancies), a simple analytical expression is derived which relates the capacitance to the applied bias. The model is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.

引用

页数：3

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