Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

被引：89

作者：

Gonon, P. ^{[1
]}

Vallee, C. ^{[1
]}

机构：

[1] Univ Grenoble 1, LTM, CNRS, French Natl Res Ctr,CEA,LETI,D2NT,LTM, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-insulator-metal capacitors using high-k oxides are known to display nonlinear capacitance-voltage (C-V) characteristics. In the present work it is proposed that such nonlinearities arise from an electrode polarization mechanism. By considering a field activated hopping conduction in the bulk (related to oxygen vacancies), a simple analytical expression is derived which relates the capacitance to the applied bias. The model is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.

引用

页数：3

共 22 条

[1] Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics [J].

Babcock, JA ;

Balster, SG ;

Pinto, A ;

Dirnecker, C ;

Steinmann, P ;

Jumpertz, R ;

El-Kareh, B .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) :230-232

[2] POLARIZATION IN POTASSIUM CHLORIDE CRYSTALS [J].

BEAUMONT, JH ;

JACOBS, PWM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :657-&

[3] Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides -: art. no. 052902 [J].

Bécu, S ;

Crémer, S ;

Autran, JL .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[4] Investigation and modeling of the electrical properties of metal-oxide-metal structures formed from chemical vapor deposited Ta2O5 films [J].

Blonkowski, S ;

Regache, M ;

Halimaoui, A .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1501-1508

[5]

BOCKRIS JO, 1970, MODERN ELECTROCHEMIS, V2, P731

[6] Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors [J].

Durand, C. ;

Vallee, C. ;

Dubourdieu, C. ;

Kahn, M. ;

Derivaz, M. ;

Blonkowski, S. ;

Jalabert, D. ;

Hollinger, P. ;

Fang, Q. ;

Boyd, I. W. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03) :459-466

[7] Effects of O vacancies and C doping on dielectric properties of ZrO2:: A first-principles study [J].

Dutta, Gargi ;

Hembram, K. P. S. S. ;

Rao, G. Mohan ;

Waghmare, Umesh V. .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

[8] CONTRIBUTION OF SPACE-CHARGE LAYER TO DIELECTRIC-CONSTANT OF SILVER-HALIDES [J].

FATUZZO, E ;

COPPO, S .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1457-&

[9] Negative oxygen vacancies in HfO2 as charge traps in high-k stacks [J].

Gavartin, J. L. ;

Ramo, D. Munoz ;

Shluger, A. L. ;

Bersuker, G. ;

Lee, B. H. .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[10] Metallorganic chemical vapor deposition of Sr-Ta-O and Bi-Ta-O films for backend integration of high-k capacitors [J].

Goux, L. ;

Vander Meeren, H. ;

Wouters, D. J. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (07) :F132-F136

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