Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates

被引：8

作者：

Tuzun, O. ^{[1
]}

Slaoui, A. ^{[1
]}

Maurice, C. ^{[2
]}

Vallon, S. ^{[3
]}

机构：

[1] CNRS, InESS, UdS, UMR 7163, F-67037 Strasbourg, France

[2] Ecole Mines St Etienne, CNRS, SMS Ctr, UMR 5146, F-42023 St Etienne, France

[3] Corning European Technol Ctr, F-77210 Avon, France

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 99卷 / 01期

关键词：

FILM SOLAR-CELLS; AMORPHOUS-SILICON; TEMPERATURE; DEPOSITION;

D O I：

10.1007/s00339-009-5506-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we present extended structural properties of poly-Si thin films fabricated by aluminium-induced crystallization (AIC) of amorphous silicon (a-Si) on high-temperature glass-ceramic substrates. The silicon nucleation kinetics on glass-ceramic substrates was investigated by optical microscopy. The crystalline quality of the films was studied by micro-Raman spectroscopy as a function of exchange annealing conditions. By means of electron backscattering diffraction (EBSD), we have analyzed the effect of thermal annealing on silicon grain size and its distribution, intra- and inter-grains defects, and on the grains preferential crystallographic orientation. The optimal thermal annealing condition, allowing 100% crystallized polysilicon large grains with an average grain size of 26 mu m and aOE (c) 100 > oriented, acquired a thermal budget of 475A degrees C and 8 h.

引用

页码：53 / 61

页数：9

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