Double-side packaged, high power IGBTs for improved thermal and switching characteristics

This paper describes a new packaging technique for improving the thermal and switching characteristics of high power IGBTs. Two patterned DEC (Direct Bond Copper) substrates are used to contact the top and bottom of an IGBT chip. In this way, heat dissipation can take place on both sides of the device, and the wire-bonding between the emitter pad and the package electrode can be eliminated. Experimental results show that this packaging technique can improve the heat dissipation in an IGBT with approximately 84% increase in current handling capability and 33% decrease in steady-state thermal impedance. The packaging technique can also improve the frequency characteristics of the IGBT. At 10 KHz for example, there is approximately 37% increase in current handling capability. The improvement in switching characteristics is about 10% decrease in turnoff delay time and 20% decrease in fall time.