Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels

被引：37

作者：

Bachlechner, ME ^{[1
]}

Omeltchenko, A

Nakano, A

Kalia, RK

Vashishta, P

Ebbsjo, I

Madhukar, A

Messina, P

机构：

[1] Louisiana State Univ, Dept Phys & Astron, Concurrent Comp Lab Mat Simulat, Baton Rouge, LA 70803 USA

[2] Louisiana State Univ, Dept Comp Sci, Baton Rouge, LA 70803 USA

[3] Uppsala Univ, Studsvik Neutron Res Lab, S-61182 Nykoping, Sweden

[4] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA

[5] CALTECH, Ctr Adv Comp Res, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ten million atom multiresolution molecular-dynamics simulations are performed on parallel computers to determine atomic-level stress distributions in a 54 nm nanopixel on a 0.1 mu m silicon substrate. Effects of surfaces, edges, and lattice mismatch at the Si(111)/Si3N4(0001) interface on the stress distributions are investigated. Stresses are found to be highly inhomogeneous in the nanopixel. The top surface of silicon nitride has a compressive stress of + 3 GPa and the stress is tensile, -1 GPa, in silicon below the interface. (C) 1998 American Institute of Physics.

引用

页码：1969 / 1971

页数：3

共 22 条

[1]

Bachlechner ME, 1997, MATER RES SOC SYMP P, V446, P157

[2] Environment-dependent interatomic potential for bulk silicon [J].