A Novel 3D Silicon-Based MEMS Packaging for Millimeter-Wave Applications

A novel 3D silicon-based micro electro mechanical system (MEMS) packaging using CPW-SIW-CPW transition structure to achieve the RF feed through is presented in this paper, which is very suitable for millimeter-wave applications. This approach can reduce the transmission loss and the radiation loss of the packaging in the millimeter-wave frequencies. The packaging approach is based on the chip to wafer process, the MEMS process and the wafer bonding process. As an example, this paper presents the development of a Q-band module. The parameter of this packaging sample meet the design requirements. In the range of 40 to 60 GHz, the insertion loss and the reflection loss of the feed through are 0.4 dB and 20 dB respectively. The test results show that, the maximum of the Rx Gain is 6.5 dB, and the output power for 1dB compression is 8dBm. The dimension of the module is 14.8mmx4.8mmx1.2mm.