The role of self-assembled monolayers (SAMs), trichloro(1H,1H,2H,2H-perfluorooctyl) (FTS) and octadecyltrichlorosilane (OTS), deposited on indium tin oxide (ITO) substrates, on electronic properties of the poly(3-hexylthiophene) (P3HT)/SAM/ITO system is reported. SAMs, well known for modifying the surface energies of materials, are also known to modify the work functions (WFs) of semiconductors. Unsurprisingly, differences between the band-bending behaviors of P3HT/ITO, P3HT/OTS/ITO, and P3HT/FTS/ITO systems were observed because the SAMs modify the WF of ITO. However, the degrees of band bending occurring in these systems could not be attributed solely to the modified WFs of the substrate. This was apparent based on measurements of samples that included P3HT films prepared with different morphological structures. Changes in the morphological structure, due to different deposition methods and surface energies of the substrates, are necessarily connected to changes in the electronic structure, including changes in the electronic density of states (DOS), of P3HT. An association between (i) the WF differences between P3HT, ITO, and SAM/ITO substrates, (ii) the surface energies of the ITO and SAM/ITO substrates, which influence the morphology of the deposited P3HT layer, (iii) the DOS widths of P3HT, and (iv) the degree of band bending is suggested.
