The microwave dielectric properties of CaTiO3 (CT), MgTiO3 (MT) and (Mg0.93Ca0.07)TiO3 (MCT) thin films prepared by the metalorganic solution deposition technique were investigated. The well-crystallized CT, NIT and MCT thin films were annealed at 800degreesC. The microwave dielectric properties of the thin films were measured using a circular-patch capacitor geometry with a network analyzer. The dielectric constant (K), dielectric loss (tan delta) and temperature coefficient of dielectric constant (TCK) of CT films measured up to 6 GHz were 160 +/- 3, 0.003 +/- 0.0003 and - 1340 ppm/degreesC, respectively. In contrast, the MT films showed K similar to 16 +/- 1, tan delta similar to 0.0008 +/- 0.0001 and TCK similar to +260 ppm/degreesC. MCT films exhibited microwave dielectric properties of K similar to 22 +/- 1, tan delta - 0.0012 +/- 0002 and TCK similar to +10 ppm/degreesC. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.