Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C

被引：65

作者：

Battaglia, J. -L. ^{[1
]}

Kusiak, A. ^{[1
]}

Schick, V. ^{[1
]}

Cappella, A. ^{[1
]}

Wiemer, C. ^{[2
]}

Longo, M. ^{[2
]}

Varesi, E. ^{[3
]}

机构：

[1] Univ Bordeaux, UMR 8508, Lab TREFLE, F-33405 Talence, France

[2] INFM, CNR, Lab MDM, I-20041 Milan, Italy

[3] Numonyx, Milan, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 04期

关键词：

amorphous state; antimony compounds; crystal structure; crystallisation; germanium compounds; interface phenomena; phase change materials; silicon compounds; solid-state phase transformations; thermal conductivity; thermal resistance; BOUNDARY RESISTANCE; CONDUCTANCE;

D O I：

10.1063/1.3284084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 degrees C and then to the hexagonal crystalline phase (hcp) at 310 degrees C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.

引用

页数：6

共 21 条

[1] Thermophysical characterization of a CuO thin deposit [J].

Battaglia, Jean-Luc ;

Kusiak, Andrzej .

INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2007, 28 (05) :1563-1577

[2] Thermal diffusivity and effusivity of thin layers using time-domain thermoreflectance [J].

Battaglia, Jean-Luc ;

Kusiak, Andrzej .

PHYSICAL REVIEW B, 2007, 76 (18)

[3] THERMAL-CONDUCTIVITY MEASUREMENT FROM 30-K TO 750-K - THE 3-OMEGA METHOD [J].

CAHILL, DG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (02) :802-808

[4] An interior trust region approach for nonlinear minimization subject to bounds [J].

Coleman, TF ;

Li, YY .

SIAM JOURNAL ON OPTIMIZATION, 1996, 6 (02) :418-445

[5] Influence of deposition parameters on the properties of sputtered Ge2Sb2Te5 films [J].

Dieker, H ;

Wuttig, M .

THIN SOLID FILMS, 2005, 478 (1-2) :248-251

[6] Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells [J].

Fallica, Roberto ;

Battaglia, Jean-Luc ;

Cocco, Simone ;

Monguzzi, Cristiano ;

Teren, Andrew ;

Wiemer, Claudia ;

Varesi, Enrico ;

Cecchini, Raimondo ;

Gotti, Andrea ;

Fanciulli, Marco .

JOURNAL OF CHEMICAL AND ENGINEERING DATA, 2009, 54 (06) :1698-1701

[7] The role of interfaces in Damascene phase-change memory [J].

Kencke, David L. ;

Karpov, Ilya V. ;

Johnson, Brian G. ;

Lee, Sean Jong ;

Kau, DerChang ;

Hudgens, Stephen J. ;

Reifenberg, John P. ;

Savransky, Semyon D. ;

Zhang, Jingyan ;

Giles, Martin D. ;

Spadini, Gianpaolo .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :323-+

[8] Fullerene thermal insulation for phase change memory [J].

Kim, Cheolkyu ;

Suh, Dong-Seok ;

Kim, Kijoon H. P. ;

Kang, Youn-Seon ;

Lee, Tae-Yon ;

Khang, Yoonho ;

Cahill, David G. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[9] Thermal boundary resistance at Ge2Sb2Te5/ZnS:SiO2 interface [J].

Kim, EK ;

Kwun, SI ;

Lee, SM ;

Seo, H ;

Yoon, JG .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3864-3866

[10] Correlation between microstructure and optical properties of Ge2Sb2Te5 thin films [J].

Kim, JH .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :6770-6772

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