A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

被引：0
|
作者：
Sandén, M [1 ]
Zhang, SL [1 ]
Grahn, JV [1 ]
Östling, M [1 ]
机构：
[1] Tekniska Hogskolan, Dept Elect, SE-16440 Kista, Sweden
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 09期
关键词：
bipolar transistors; modeling; parameter estimation;
D O I：
10.1109/16.861590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process, The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance.
引用
收藏
页码：1767 / 1769
页数：3
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