Ultra-low threshold optically pumped single mode InP micro-lasers grown on SOI

被引：0
|
作者：
Lin, Liying [1 ]
Xue, Ying [1 ]
Li, Jie [1 ]
Yan, Zhao [1 ]
Han, Yu [1 ]
Xing, Zengshan [2 ,3 ]
Wong, Kam Sing [2 ,3 ]
Lau, Kei May [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
[3] Hong Kong Univ Sci & Technol, William Mong Inst Nano Sci & Technol, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
来源：
27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021) | 2021年
关键词：
D O I：
10.1109/ISLC51662.2021.9615810
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report preliminary results of ultra-low threshold InP whispering gallery mode (WGM) micro-lasers on (001) silicon-on-insulator (SOI) wafers. Under room temperature optical pumping, single mode lasing was observed in micro-disk and micro-ring lasers with thresholds down to 12 mu J/cm(2) and 45 mu J/cm(2), respectively.
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页数：2
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