High-speed silicon-germanium photodetectors for chip-scale photonic interconnects

被引：0

作者：

Benedikovic, D. ^{[1
]}

Aubin, G. ^{[2
]}

Virot, L. ^{[3
,4
]}

Hartmann, J-M ^{[3
,4
]}

Amar, F. ^{[2
]}

Le Roux, X. ^{[2
]}

Alonso-Ramos, C. ^{[2
]}

Cassan, E. ^{[2
]}

Marris-Morini, D. ^{[2
]}

Boeuf, F. ^{[5
]}

Fedeli, J-M ^{[3
,4
]}

Kopp, C. ^{[3
,4
]}

Szelag, B. ^{[3
,4
]}

Vivien, L. ^{[2
]}

机构：

[1] Univ Zilina, Dept Multimedia & Informat Commun Technol, Zilina 01026, Slovakia

[2] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France

[3] Univ Grenoble Alpes, F-38054 Grenoble, France

[4] CEA, LETI, F-38054 Grenoble, France

[5] STMicroelectronics, Silicon Technol Dev, F-38926 Crolles, France

来源：

2021 PHOTONICS NORTH (PN) | 2021年

关键词：

silicon photonics; germanium; photodetectors; optical interconnects; chip-scale communications;

D O I：

10.1109/PN52152.2021.9597963

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present our latest advances in the development of compact photodetectors based on p-i-n silicon-germaniumsilicon hetero-structures. We demonstrate credible high-speed performances, showing that those devices are likely to become key building blocks in next-generation photonic interconnects.

引用

页数：1

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