Structural and optical investigations of Cd1-xZnxTe thin film

被引:17
作者
Dwivedi, D. K. [1 ]
Dayashankar [2 ]
Singh, B. B. [3 ]
Dubey, Maheshwar [2 ]
机构
[1] MMMEC, Dept Phys, Gorakhpur 273010, Uttar Pradesh, India
[2] Univ Lucknow, Dept Phys, Lucknow 226007, Uttar Pradesh, India
[3] MMMEC, Dept Mech Engn, Gorakhpur 273010, Uttar Pradesh, India
关键词
Thin films; XRD; SEM; Optical band gap; Optical transmission;
D O I
10.1016/j.jnoncrysol.2010.05.061
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin films of Cd1-xZnxTe (x = 0.02, 0.04, 0.06, 0.08, 0.10) were prepared by vacuum evaporation technique in a base pressure of 10(-5) Tort on well-cleaned glass substrates. XRD and SEM were used to study the structure of as-deposited and annealed films. These studies show that there is no appreciable change in structure when films were annealed in the temperature range of 300-400 K, however, when annealed above 400 K the formation of some polycrystalline structures is seen in the amorphous phases. The transmittance and absorbance of the as-deposited films were measured in the spectral range of 400-1000 nm. The dependence of the absorption coefficient on the photon energy is well described by the relation alpha h nu = B (h nu - E-o)(2). The optical transmission of these films has been studied as a function of photon wavelength. It has been found that the optical band gap first increases with annealing temperature up to 600 K thereafter decreases continuously with increase in annealing temperature and sharply decreases near crystallization temperature. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:1563 / 1568
页数:6
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