Resistive switching effect caused by oxygen vacancy migration in SrTiO3 ceramic

被引：12

作者：

Zhong, Wen-Min ^{[1
]}

Tang, Xin-Gui ^{[1
]}

Liu, Qiu-Xiang ^{[1
]}

Jiang, Yan-Ping ^{[1
]}

Li, Wen-Hua ^{[1
]}

Yue, Jing-Long ^{[1
]}

机构：

[1] Guangdong Univ Technol, Guangzhou Higher Educ Mega Ctr, Sch Phys & Optoelect Engn, Guangzhou 510006, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2021年 / 615卷

基金：

中国国家自然科学基金;

关键词：

Ceramic; Oxygen vacancies; Dielectric relaxation; Resistive switching; DIELECTRIC-RELAXATION BEHAVIOR; DIFFUSION;

D O I：

10.1016/j.physb.2021.413080

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

STO has been studied for many years and is mainly used in various fields such as ceramic capacitors, memristors and solar cells. The influence of oxygen vacancies on its physical properties is very important. In this article, we report the dielectric, impedance and current-voltage characteristics of STO ceramic at different temperatures. When the temperature is increased, the oxygen vacancy concentration of the STO ceramic increases, resulting in dielectric dispersion and dielectric relaxation behavior. In the analysis of impedance spectroscopy, oxygen vacancies mainly undergo secondary ionization and conduct grain conduction within the STO. The conductivity of STO ceramic increases with increasing temperature, mainly due to the increase in oxygen vacancy concentration. The STO ceramic at high temperature exhibits a current-voltage characteristic curve similar to the resistive switching effect, due to the migration of oxygen vacancies.

引用

页数：7

共 42 条

[1] Resistive switching characteristics and mechanism of thermally grown WOx thin films [J].

Biju, Kuyyadi P. ;

Liu, Xinjun ;

Siddik, Manzar ;

Kim, Seonghyun ;

Shin, Jungho ;

Kim, Insung ;

Ignatiev, Alex ;

Hwang, Hyunsang .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)

[2] Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes [J].

Bilkan, Cigdem ;

Altindal, Semsettin .

JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 708 :464-469

[3] Electric field control of the LaAlO3/SrTiO3 interface ground state [J].

Caviglia, A. D. ;

Gariglio, S. ;

Reyren, N. ;

Jaccard, D. ;

Schneider, T. ;

Gabay, M. ;

Thiel, S. ;

Hammerl, G. ;

Mannhart, J. ;

Triscone, J. -M. .

NATURE, 2008, 456 (7222) :624-627

[4] Third-order optical nonlinearities of Cu and Tb nanoparticles in SrTiO3 [J].

Cetin, A. ;

Kibar, R. ;

Hatipoglu, M. ;

Karabulut, Y. ;

Can, N. .

PHYSICA B-CONDENSED MATTER, 2010, 405 (09) :2323-2325

[5] Shapes of epitaxial gold nanocrystals on SrTiO3 substrates [J].

Chen, Peiyu ;

Murugappan, Krishnan ;

Castell, Martin R. .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (08) :4416-4428

[6] Stimulating Oxide Heterostructures: A Review on Controlling SrTiO3-Based Heterointerfaces with External Stimuli [J].

Christensen, Dennis Valbjorn ;

Trier, Felix ;

Niu, Wei ;

Can, Yulin ;

Zhang, Yu ;

Jespersen, Thomas Sand ;

Chen, Yunzhong ;

Pryds, Nini .

ADVANCED MATERIALS INTERFACES, 2019, 6 (21)

[7] Semiconductor flexoelectricity in graphite-doped SrTiO3 ceramics [J].

Dai, Zhonghua ;

Guo, Shuxuan ;

Gong, Yun ;

Wang, Zhiguo .

CERAMICS INTERNATIONAL, 2021, 47 (05) :6535-6539

[8] Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface [J].

Gao, Zhaomeng ;

Huang, Xiushi ;

Li, Pei ;

Wang, Longfei ;

Wei, Ling ;

Zhang, Weifeng ;

Guo, Haizhong .

ADVANCED MATERIALS INTERFACES, 2018, 5 (08)

[9] GRAIN-BOUNDARY IONIC-CONDUCTION IN ZIRCONIA-BASED SOLID-ELECTROLYTE WITH ALUMINA ADDITION [J].

GUO, X ;

TANG, CQ ;

YUAN, RZ .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1995, 15 (01) :25-32

[10] Effect of strain on the modifications in electronic structure and resistive switching in Ca-doped BiFeO3 films [J].

Jethva, Sadaf ;

Katba, Savan ;

Bhatnagar, Mukul ;

Ranjan, Mukesh ;

Shukla, Dinesh ;

Kuberkar, D. G. .

JOURNAL OF APPLIED PHYSICS, 2019, 125 (08)

← 1 2 3 4 5 →