Design and Development of an S-band 6 bit MMIC Attenuator with low Insertion loss

被引：1

作者：

Goyal, Umakant ^{[1
]}

Kumar, Ashok ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

Low insertion loss; MMIC; Digital attenuator; S-band;

D O I：

10.1007/978-3-319-03002-9_40

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic S-band 6 bit digital attenuator with dynamic range of 31.5dB and with low insertion loss and compact size has been designed, fabricated and tested. Result shows the exceptional performance with reference state insertion loss as low as 2.8dB at 3.2GHz and VSWR better then 15dB over all attenuation state and frequencies. The chip has a total size of 5.0x2.5mm(2) and the technology used is 0.7um GaAs MESFET (G75) switch process.

引用

页码：157 / 159

页数：3