Heat-treatment induced modifications of porous silicon

被引：0

作者：

Dannefaer, S ^{[1
]}

Wiebe, C ^{[1
]}

Kerr, D ^{[1
]}

机构：

[1] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

porous silicon; positron annihilation;

D O I：

10.4028/www.scientific.net/MSF.258-263.1725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron lifetime spectroscopy was used to investigate a porous silicon film subjected to heat treatments in argon atmosphere. After annealings between 300 and 500 degrees C the mass of the film increased by 17% due to oxygen uptake. Vacancy clusters in the silicon oxide layer covering the nano-crystallites increased their concentration by a factor of 3. Above 900 degrees C significant structural changes of the film took place as manifested by growth in the size of vacancy clusters.

引用

页码：1725 / 1729

页数：5

共 3 条

[1] A positron annihilation investigation of porous silicon
Dannefaer, S
Kerr, D
Craigen, D
Bretagnon, T
Teliercio, T
Foucaran, A
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) : 9110 - 9117
[2] THE EFFECT OF SURFACE MODIFICATION ON THE LUMINESCENCE OF POROUS SILICON
GARDELIS, S
HAMILTON, B
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5327 - 5333
[3] POSTTREATMENT EFFECTS ON ELECTRICAL-CONDUCTION IN POROUS SILICON
MOLLER, F
BENCHORIN, M
KOCH, F
[J]. THIN SOLID FILMS, 1995, 255 (1-2) : 16 - 19

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