Electronic structure of xenon implanted with low energy in amorphous silicon

被引：4
|
作者：
Barbieri, P. F. [1 ]
Landers, R. [1 ]
de Oliveira, M. H., Jr. [1 ]
Alvarez, F. [1 ]
Marques, F. C. [1 ]
机构：
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, GPF, DFA,IFGW, BR-13083970 Campinas, SP, Brazil
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2007年 / 156卷
基金：
巴西圣保罗研究基金会;
关键词：
binding energy; xenon; relaxation; trapping; assisted deposition; voids;
D O I：
10.1016/j.elspec.2006.12.064
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Electronic struture of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M4N45N45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：409 / 412
页数：4
相关论文
共 50 条
  • [21] Hyperuniformity in amorphous silicon based on the measurement of the infinite-wavelength limit of the structure factor
    Xie, Ruobing
    Long, Gabrielle G.
    Weigand, Steven J.
    Moss, Simon C.
    Carvalho, Tobi
    Roorda, Sjoerd
    Hejna, Miroslav
    Torquato, Salvatore
    Steinhardt, Paul J.
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2013, 110 (33) : 13250 - 13254
  • [22] The effect of oxygen on the ZnS electronic energy-band structure
    N. K. Morozova
    I. A. Karetnikov
    K. V. Golub
    N. D. Danilevich
    V. M. Lisitsyn
    V. I. Oleshko
    Semiconductors, 2005, 39 : 485 - 492
  • [23] Detection of Alpha Particles and Low Energy Gamma Rays by Thermo-Bonded Micromegas in Xenon Gas
    Wei, Yuehuan
    Guan, Liang
    Zhang, Zhiyong
    Lin, Qing
    Wang, Xiaolian
    Ni, Kaixuan
    Zhao, Tianchi
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (04) : 3008 - 3013
  • [24] Realistic Atomistic Structure of Amorphous Silicon from Machine-Learning-Driven Molecular Dynamics
    Deringer, Volker L.
    Bernstein, Noam
    Bartok, Albert P.
    Cliffe, Matthew J.
    Kerber, Rachel N.
    Marbella, Lauren E.
    Grey, Clare P.
    Elliott, Stephen R.
    Csanyi, Gabor
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (11): : 2879 - 2885
  • [25] Electronic structure and charge transport properties of amorphous Ta2O5 films
    Shvets, V. A.
    Aliev, V. Sh.
    Gritsenko, D. V.
    Shaimeev, S. S.
    Fedosenko, E. V.
    Rykhlitski, S. V.
    Atuchin, V. V.
    Gritsenko, V. A.
    Tapilin, V. M.
    Wong, H.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (26) : 3025 - 3033
  • [26] Lithium effect on the electronic properties of porous silicon for energy storage applications: a DFT study
    Gonzalez, I.
    Sosa, A. N.
    Trejo, A.
    Calvino, M.
    Miranda, A.
    Cruz-Irisson, M.
    DALTON TRANSACTIONS, 2018, 47 (22) : 7505 - 7514
  • [27] Measurement of Two Low-Temperature Energy Gaps in the Electronic Structure of Antiferromagnetic USb2 Using Ultrafast Optical Spectroscopy
    Qi, J.
    Durakiewicz, T.
    Trugman, S. A.
    Zhu, J. -X.
    Riseborough, P. S.
    Baumbach, R.
    Bauer, E. D.
    Gofryk, K.
    Meng, J. -Q.
    Joyce, J. J.
    Taylor, A. J.
    Prasankumar, R. P.
    PHYSICAL REVIEW LETTERS, 2013, 111 (05)
  • [28] A continuum model of deformation, transport and irreversible changes in atomic structure in amorphous lithium-silicon electrodes
    Bower, Allan F.
    Chason, Eric
    Guduru, Pradeep R.
    Sheldon, Brian W.
    ACTA MATERIALIA, 2015, 98 : 229 - 241
  • [29] The effect of oxygen during irradiation of silicon with low energy Cs+ ions
    Berghmans, B.
    Vandervorst, W.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (03)
  • [30] Markov Chain Monte Carlo Effective Range Analysis of Low-Energy Electron Elastic Scattering from Xenon
    Fedus, Kamil
    BRAZILIAN JOURNAL OF PHYSICS, 2016, 46 (01) : 1 - 9
12345