Electronic structure of xenon implanted with low energy in amorphous silicon

被引：4

作者：

Barbieri, P. F. ^{[1
]}

Landers, R. ^{[1
]}

de Oliveira, M. H., Jr. ^{[1
]}

Alvarez, F. ^{[1
]}

Marques, F. C. ^{[1
]}

机构：

[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, GPF, DFA,IFGW, BR-13083970 Campinas, SP, Brazil

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2007年 / 156卷

基金：

巴西圣保罗研究基金会;

关键词：

binding energy; xenon; relaxation; trapping; assisted deposition; voids;

D O I：

10.1016/j.elspec.2006.12.064

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Electronic struture of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M4N45N45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：409 / 412

页数：4

共 50 条

[1] Electronic Structure and Optical Absorbance of Doped Amorphous Silicon Slabs
Ramirez, Jessica J.
Kilin, Dmitri S.
Micha, David A.
INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2012, 112 (01) : 300 - 313
[2] Implantation of xenon in amorphous carbon and silicon for brachytherapy application
Marques, F. C.
Barbieri, P. F.
Viana, G. A.
da Silva, D. S.
APPLIED SURFACE SCIENCE, 2013, 275 : 156 - 159
[3] STRUCTURAL EVOLUTION OF THE LOW-ENERGY DEUTERIUM-IMPLANTED SILICON
SIDOROV, MV
OKTYABRSKY, SR
LOMIDZE, MA
GORODETSKY, AE
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1992, 124 (02): : 223 - 232
[4] Flowing damage in ion-implanted amorphous silicon
Pothier, Jean-Christophe
Schiettekatte, Francois
Lewis, Laurent J.
PHYSICAL REVIEW B, 2011, 83 (23)
[5] Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions
A. R. Chelyadinskii
V. S. Varichenko
A. M. Zaitsev
Physics of the Solid State, 1998, 40 : 1478 - 1481
[6] Atomic and electronic structures of a vacancy in amorphous silicon
Pedersen, Andreas
Pizzagalli, Laurent
Jonsson, Hannes
PHYSICAL REVIEW B, 2020, 101 (05)
[7] Relaxation phenomena in keV-ion implanted hydrogenated amorphous silicon carbide
Musumeci, P
Calcagno, L
Makhtari, A
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 296 - 300
[8] Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing
Miro, S.
Costantini, J. -M.
Sorieul, S.
Gosmain, L.
Thome, L.
PHILOSOPHICAL MAGAZINE LETTERS, 2012, 92 (11) : 633 - 639
[9] Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si
Meidanshahi, Reza Vatan
Bowden, Stuart
Goodnick, Stephen M.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2019, 21 (24) : 13248 - 13257
[10] Evolution of the Potential-Energy Surface of Amorphous Silicon
Kallel, Houssem
Mousseau, Normand
Schiettekatte, Francois
PHYSICAL REVIEW LETTERS, 2010, 105 (04)

← 1 2 3 4 5 →