Magnetocapacitance in a ferromagnetic metal tunnel junction system

被引：4

作者：

Kim, Kyoo ^{[1
]}

Min, B. I. ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, PCTP, Dept Phys, Pohang 790784, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期

关键词：

D O I：

10.1063/1.2710338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the magnetocapacitance (MC) of a ferromagnetic (FM) metal-oxide-FM metal tunnel junction. The capacitance changes linearly as the magnetic field increases, and its amount depends on the shape of the density of state at the Fermi level of a FM metal. We have also investigated the effect of the bandwidth change induced by the electron-electron interaction on the MC. We have found that the effect of the bandwidth change on the MC can be substantial near the magnetic phase boundary. (c) 2007 American Institute of Physics.

引用

页数：3

共 9 条

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