Nonlinear optical absorption and refractive index change in realistic GaAs/Ga1-xAlxAs V-groove quantum wires

被引:4
|
作者
Giraldo-Tobon, Eugenio [1 ,2 ]
Palacio, J. L. [2 ,3 ]
Fulla, M. R. [2 ,3 ]
Ospina, Walter [1 ]
Miranda, Guillermo L. [1 ]
机构
[1] Univ EIA Envigado, Envigado, Colombia
[2] Univ Nacl Colombia, Escuela Fis, Medellin AA 3840, Colombia
[3] Inst Universitaria Pascual Bravo, Medellin AA 6564, Colombia
关键词
V-groove quantum wire; Terahertz band; Optical absorption coefficient; Refractive index change; ELECTRONIC STATES; COEFFICIENTS; NANOSTRUCTURES; FABRICATION; EPITAXY;
D O I
10.1016/j.mssp.2022.106762
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The intersubband optical absorption coefficient and refractive index change of a realistic single-electron GaAs/Ga1-xAlx V-groove quantum wire are calculated. Finite confinement potentials and analytic models capable of adapting to many V-groove quantum wire shapes reported in the literature are used in the calculations. This scheme allows analyzing the effect of the inter-sidewall angle and crescent thickness on the optical response. Additionally, the effects of external fields such as hydrostatic pressure and temperature are taken into account. The results show that the geometrical parameters have a principal role compared to the temperature and hydrostatic pressure. In addition, optical activity within the Terahertz band using the parameter values that fit the typically V-groove quantum wires reported in the literature was found.
引用
收藏
页数:10
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