carbon nanotubes;
chemical vapor deposition;
X-ray diffraction;
field emission;
D O I:
10.1016/j.diamond.2004.05.009
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Carbon nanotubes (CNTs) were grown for 30 min over impregnated Co/MgO, Mo/MgO, and Co-Mo/MgO catalysts by thermal cracking of C2H2 at 800 degreesC. 30Mo/70MgO catalyst was inactive in growing CNTs. However, the addition of Mo to Co greatly enhanced the growth of CNTs. The highest yield was observed over 15Mo/15Co/70MgO catalyst. The grown tubes were multi-wall carbon nanotubes (MWNTs) with average diameter of 15 nm. The growth was followed by tip growth mode. Purified CNTs contained more than 90% MWNTs. Co oxide precursor was released from the CoMoO4 species at growth temperature and participated in the CNTs growth. The field emission characteristics of the grown CNTs showed that the turn-on-voltage appeared at the electric field of 3.17 V/mum with the calculated field enhancement factor (beta) of 5054. The observed beta value indicated better suitability of our grown CNTs for the field emission display (FED) application. (C) 2004 Elsevier B.V. All rights reserved.
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ning, YS
Zhang, XB
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机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, XB
Wang, YW
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机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, YW
Sun, YL
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机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Sun, YL
Shen, LH
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机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Shen, LH
Yang, XF
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机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, XF
Van Tendeloo, G
论文数: 0引用数: 0
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机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ning, YS
Zhang, XB
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, XB
Wang, YW
论文数: 0引用数: 0
h-index: 0
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, YW
Sun, YL
论文数: 0引用数: 0
h-index: 0
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Sun, YL
Shen, LH
论文数: 0引用数: 0
h-index: 0
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Shen, LH
Yang, XF
论文数: 0引用数: 0
h-index: 0
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, XF
Van Tendeloo, G
论文数: 0引用数: 0
h-index: 0
机构:Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China