Mechanical and dielectric properties of porous Si3N4-SiC(BN) ceramic

被引：56
|
作者：
Li, Xiangming [1 ,2 ]
Zhang, Litong [1 ,2 ]
Yin, Xiaowei [1 ,2 ]
Yu, Zhaoju [3 ,4 ]
机构：
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
[2] Northwestern Polytech Univ, Natl Key Lab Thermostruct Composite Mat, Xian 710072, Shaanxi, Peoples R China
[3] Xiamen Univ, Adv Mat Lab, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
[4] Xiamen Univ, Dept Mat Sci & Engn, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 490卷 / 1-2期
关键词：
Silicon nitride; Silicon carbide; Mechanical properties; Dielectric properties; X-ray diffraction; MICROWAVE-ABSORPTION PROPERTIES; ELECTROMAGNETIC PROPERTIES; ABSORBING PROPERTIES; NATIVE DEFECTS; CARBON-BLACK; COMPOSITE; BEHAVIOR; OXIDATION; POWDER; STRENGTH;
D O I：
10.1016/j.jallcom.2009.10.107
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Polymer-derived nano-sized SiC(BN) was successfully introduced into porous Si3N4 ceramic by precursor infiltration pyrolysis (PIP). After PIP, the porous Si3N4-SiC(BN) ceramic possesses improved mechanical properties and excellent dielectric properties. As the annealing temperature increases from 900 degrees C to 1800 degrees C, the mechanical properties of porous Si3N4-SiC(BN) ceramic improve little, the real part and imaginary part of the permittivity of porous Si3N4-SiC(BN) ceramic increase obviously with the dielectric loss increasing gradually over the frequencies ranging from 8.2 GHz to 12.4 GHz. The increase of dielectric loss is due to the dipolar polarization and the increase of grain boundary as the annealing temperature increases. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：L40 / L43
页数：4
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