Influence of sputtering power and Ar-N2 flow on the structure and optical properties of indium nitride films prepared by magnetron sputtering

被引：6
作者：
Anjum, Faiza [1 ]
Ahmad, Riaz [1 ,2 ]
Afzal, Naveed [2 ]
机构：
[1] Govt Coll Univ, Dept Phys, Lahore, Pakistan
[2] Govt Coll Univ, Ctr Adv Studies Phys, Lahore, Pakistan
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2019年 / 174卷 / 9-10期
关键词：
InN; thin film; magnetron sputtering; band gap; optical properties; INN FILMS; BAND-GAP; THIN-FILMS; ELECTRICAL-PROPERTIES; SURFACE-MORPHOLOGY; RF POWER; GROWTH; DEPOSITION;
D O I：
10.1080/10420150.2019.1663190
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
This paper discusses the deposition of indium nitride (InN) thin films on Si (100) substrates by using pulsed DC magnetron sputtering. Effects of varying sputtering power and Ar-N-2 flow ratio on the structural, morphological, and optical properties of indium nitride (InN) films were investigated. The structural characterization indicated nanocrystalline InN film with preferred orientation towards (101) plane that exhibited the optimum crystalline quality at 130 W and for 40:60 Ar-N-2 ratio. The surface morphology of InN, as observed through FESEM, contained irregularly shaped nanocrystals with size that increases with higher sputtering power and Ar:N-2 flow ratio. The optical properties of InN films were studied using ellipsometer at room temperature. The band gap of InN was decreased with the increase of sputtering power to 130 W, whereas an increase in the band gap was noticed with the increase of the Ar:N-2 flow ratio.
引用
收藏
页码：828 / 837
页数：10
相关论文
共 50 条
[1]   GROWTH OF INN FOR OHMIC CONTACT FORMATION BY ELECTRON-CYCLOTRON RESONANCE METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
PEARTON, SJ ;
REN, F ;
WISK, PW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :179-182
[2]   InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES [J].
Amirhoseiny, M. ;
Hassan, Z. ;
Ng, S. S. ;
Chuah, L. S. ;
Ahmad, M. A. ;
Yusof, Y. .
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2012, 26 (31)
[3]   Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering [J].
Amirhoseiny, M. ;
Hassan, Z. ;
Ng, S. S. ;
Ahmad, M. A. .
JOURNAL OF NANOMATERIALS, 2011, 2011
[4]   Optical properties of photo-electrochemical etching of anisotropic silicon (110) [J].
Amirhoseiny, Maryam ;
Hassan, Zainuriah ;
ShaShiong, Ng .
IEICE ELECTRONICS EXPRESS, 2012, 9 (08) :752-757
[5]   Characterization of InN films prepared using magnetron sputtering at variable power [J].
Anjum, Faiza ;
Ahmad, Riaz ;
Afzal, Naveed ;
Murtaza, G. .
MATERIALS LETTERS, 2018, 219 :23-28
[6]  
Ariyebe E.A., 2014, SEMICOND SCI TECH, V29, P7
[7]   Structural and electrochromic properties of InN thin films [J].
Asai, N ;
Inoue, Y ;
Sugimura, H ;
Takai, O .
THIN SOLID FILMS, 1998, 332 (1-2) :267-271
[8]   Indium nitride (InN): A review on growth, characterization, and properties [J].
Bhuiyan, AG ;
Hashimoto, A ;
Yamamoto, A .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808
[9]   The effect of rf power on the growth of InN films by modified activated reactive evaporation [J].
Biju, Kuyyadi P. ;
Jain, Mahaveer K. .
APPLIED SURFACE SCIENCE, 2008, 254 (22) :7259-7265
[10]   InN, latest development and a review of the band-gap controversy [J].
Butcher, KSA ;
Tansley, TL .
SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (01) :1-37
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