Optical polarization in mono and bilayer MoS2

被引:10
作者
Park, Youngsin [1 ]
Li, Nannan [1 ]
Chan, Christopher C. S. [2 ]
Reid, Benjamin P. L. [2 ]
Taylor, Robert A. [2 ]
Im, Hyunsik [3 ]
机构
[1] Ulsan Natl Inst Sci & Technol, Sch Nat Sci, Ulsan 44919, South Korea
[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[3] Dongguk Univ, Div Phys & Semicond Sci, Seoul 04620, South Korea
基金
新加坡国家研究基金会;
关键词
MoS2; Photoluminescence; Polarization; Density functional theory; Charge distribution; VALLEY POLARIZATION; MONOLAYER MOS2; PHOTOLUMINESCENCE;
D O I
10.1016/j.cap.2017.05.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical anisotropy in monolayer- and bilayer-MoS2 was investigated by polarization resolved photoluminescence measurements. The photoluminescence of monolayer-MoS2 is found to be partially polarized at 4.2 K and maintains this polarization characteristic up to room temperature, while the photoluminescence of bilayer-MoS2 shows no obvious polarization. This polarization anisotropy is due to strain effects at the interface between the MoS2 layer and the SiO2 substrate, causing symmetry breaking of the MoS2 charge distribution. Calculations using density functional theory of the electron density distribution of the monolayer- and bilayer-MoS2 in the in-plane direction are also presented, giving support to our qualitative analysis. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1153 / 1157
页数:5
相关论文
共 26 条
[1]   Valley-selective circular dichroism of monolayer molybdenum disulphide [J].
Cao, Ting ;
Wang, Gang ;
Han, Wenpeng ;
Ye, Huiqi ;
Zhu, Chuanrui ;
Shi, Junren ;
Niu, Qian ;
Tan, Pingheng ;
Wang, Enge ;
Liu, Baoli ;
Feng, Ji .
NATURE COMMUNICATIONS, 2012, 3
[2]   Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 [J].
Cheiwchanchamnangij, Tawinan ;
Lambrecht, Walter R. L. .
PHYSICAL REVIEW B, 2012, 85 (20)
[3]   Bandgap Engineering of Strained Monolayer and Bilayer MoS2 [J].
Conley, Hiram J. ;
Wang, Bin ;
Ziegler, Jed I. ;
Haglund, Richard F., Jr. ;
Pantelides, Sokrates T. ;
Bolotin, Kirill I. .
NANO LETTERS, 2013, 13 (08) :3626-3630
[4]   Photoluminescence from Chemically Exfoliated MoS2 [J].
Eda, Goki ;
Yamaguchi, Hisato ;
Voiry, Damien ;
Fujita, Takeshi ;
Chen, Mingwei ;
Chhowalla, Manish .
NANO LETTERS, 2011, 11 (12) :5111-5116
[5]   Large-scale pattern growth of graphene films for stretchable transparent electrodes [J].
Kim, Keun Soo ;
Zhao, Yue ;
Jang, Houk ;
Lee, Sang Yoon ;
Kim, Jong Min ;
Kim, Kwang S. ;
Ahn, Jong-Hyun ;
Kim, Philip ;
Choi, Jae-Young ;
Hong, Byung Hee .
NATURE, 2009, 457 (7230) :706-710
[6]   Low-temperature photocarrier dynamics in monolayer MoS2 [J].
Korn, T. ;
Heydrich, S. ;
Hirmer, M. ;
Schmutzler, J. ;
Schueller, C. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[7]   Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186
[8]   Gate control of carrier distribution in k-space in MoS2 monolayer and bilayer crystals [J].
Kuemmell, Tilmar ;
Quitsch, Wolf ;
Matthis, Sebastian ;
Litwin, Tobias ;
Bacher, Gerd .
PHYSICAL REVIEW B, 2015, 91 (12)
[9]   Anomalous Lattice Vibrations of Single- and Few-Layer MoS2 [J].
Lee, Changgu ;
Yan, Hugen ;
Brus, Louis E. ;
Heinz, Tony F. ;
Hone, James ;
Ryu, Sunmin .
ACS NANO, 2010, 4 (05) :2695-2700
[10]   MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap [J].
Lee, Hee Sung ;
Min, Sung-Wook ;
Chang, Youn-Gyung ;
Park, Min Kyu ;
Nam, Taewook ;
Kim, Hyungjun ;
Kim, Jae Hoon ;
Ryu, Sunmin ;
Im, Seongil .
NANO LETTERS, 2012, 12 (07) :3695-3700