Imprint Control of BaTiO3 Thin Films via Chemically Induced Surface Polarization Pinning

被引：72

作者：

Lee, Hyungwoo ^{[1
]}

Kim, Tae Heon ^{[1
]}

Patzner, Jacob J. ^{[1
]}

Lu, Haidong ^{[2
]}

Lee, Jung-Woo ^{[1
]}

Zhou, Hua ^{[3
]}

Chang, Wansoo ^{[4
]}

Mahanthappa, Mahesh K. ^{[4
,5
]}

Tsymbal, Evgeny Y. ^{[2
]}

Gruverman, Alexei ^{[2
]}

Eom, Chang-Beom ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA

[2] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Argonne Natl Lab, Adv Photon Source, Xray Sci Div, Argonne, IL 60439 USA

[4] Univ Wisconsin, Dept Chem, 1101 Univ Ave, Madison, WI 53706 USA

[5] Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA

来源：

NANO LETTERS | 2016年 / 16卷 / 04期

基金：

美国国家科学基金会;

关键词：

Imprint control; ferroelectric thin films; BaTiO3; ferroelectric tunnel junctions; surface chemistry; water adsorption; FERROELECTRIC POLARIZATION; PHASE-TRANSITION; ADSORPTION; HYDROGEN; OXIDE; ELECTRORESISTANCE; ENHANCEMENT; STABILITY; PHYSICS; WATER;

D O I：

10.1021/acs.nanolett.5b05188

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectric phase in BTO tunnel junctions. We conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.

引用

页码：2400 / 2406

页数：7

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