Enhancement of the sensitivity of pressure sensors with a composite Si/porous silicon membrane

被引:12
作者
Sujatha, L. [1 ]
Bhattacharya, Enakshi [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Microelect & MEMS Lab, Madras 600036, Tamil Nadu, India
关键词
D O I
10.1088/0960-1317/17/8/025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Porous silicon (PS) has many interesting and unique properties that make it a viable material in the field of MEMS. In this paper, we investigate the application of PS in improving the sensitivity of bulk micromachined piezoresistive pressure sensors. The property of a low Young's modulus of PS and its dependence on porosity have been exploited to obtain a higher sensitivity compared to pressure sensors with single crystalline silicon membranes. Simulation was carried out to represent the Si/PS composite membrane by two layers with Young's modulus corresponding to silicon and PS. The behavior of this membrane was studied for various values of porosity and thickness of the PS layer. Composite Si/PS membranes were fabricated by converting a part of the silicon membrane thickness into PS by electrochemical etching in an HF-based electrolyte. Polysilicon piezoresistors were formed on the membrane in the form of a Wheatstone bridge for the measurement of sensitivity. When compared to membranes of silicon, the sensitivity of the composite Si/PS membrane is found to be higher showing improvement with an increase in the porosity and thickness of the PS layer.
引用
收藏
页码:1605 / 1610
页数:6
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