Deterministic Integration of hBN Emitter in Silicon Nitride Photonic Waveguide

Hybrid integration provides an important avenue for incorporating atom-like solid-state single-photon emitters into photonic platforms that possess no optically-active transitions. Hexagonal boron nitride (hBN) is particularly interesting quantum emitter for hybrid integration, as it provides a route for room-temperature quantum photonic technologies, coupled with its robustness and straightforward activation. Despite the recent progress of integrating hBN emitters in photonic waveguides, a deterministic, site-controlled process remains elusive. Here, the integration of selected hBN emitter in silicon nitride waveguide is demonstrated. A small misalignment angle of 4 degrees is shown between the emission-dipole orientation and the waveguide propagation direction. The integrated emitter maintains high single-photon purity despite subsequent encapsulation and nanofabrication steps, delivering quantum light with zero delay second order correlation function g(2)(0)=0.1 +/- 0.05. The results provide an important step toward deterministic, large scale, quantum photonic circuits at room temperature using atom-like single-photon emitters.