Optical modes within III-nitride multiple quantum well microdisk cavities

被引:63
作者
Mair, RA
Zeng, KC
Lin, JY
Jiang, HX
Zhang, B
Dai, L
Botchkarev, A
Kim, W
Morkoc, H
Khan, MA
机构
[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[4] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA
关键词
Boundary conditions - Calculations - Differentiation (calculus) - Functions - Laser modes - Photoluminescence - Resonance - Semiconducting aluminum compounds - Semiconducting gallium compounds - Semiconducting indium compounds - Semiconductor quantum wells;
D O I
10.1063/1.120573
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Angstrom/50 Angstrom GaN/AlxGa1-xN(x similar to 0.07) and 45 Angstrom/45 Angstrom InxGa1-xN/GaN(x similar to 0.15) multiple quantum well structures. Microdisks, approximately 9 mu m in diameter and regularly spaced every 50 mu m, were formed by an ion beam etch process, Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter, Optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering Gallery mode With a spacing of 15-16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation, The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed. (C) 1998 American Institute of Physics.
引用
收藏
页码:1530 / 1532
页数:3
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