Characterization of defects in electron irradiated 6H-SiC by positron lifetime and electron spin resonance

被引：10

作者：

Kawasuso, A

Itoh, H

Cha, D

Okada, S

机构：

[1] Japan Atom Energy Res Inst, Takasaki Estab, Takasaki, Gumma 37012, Japan

[2] Kunsan Natl Univ, Dept Phys, Kusan 573701, South Korea

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

electron irradiation; vacancies; defects; positron lifetime; ESR;

D O I：

10.4028/www.scientific.net/MSF.264-268.611

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Defects in 6H-SiC produced by 3 MeV electron irradiation were studied using positron lifetime and electron spin resonance (ESR) with annealing experiment. From the positron lifetime measurements, vacancy-type defects were found to be generated by irradiation. Three ESR signals were observed. Comparing with the positron lifetime data, the ESR centers were related to vacancy defects. Structural models and annealing kinetics are discussed for defects produced by irradiation.

引用

页码：611 / 614

页数：4

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