Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

被引：13

作者：

Huang, Xuan ^{[1
]}

Chang, Kuan-Chang ^{[2
]}

Chang, Ting-Chang ^{[3
]}

Tsai, Tsung-Ming ^{[2
]}

Shih, Chih-Cheng ^{[2
]}

Zhang, Rui ^{[4
]}

Huang, Syuan-Yong ^{[2
]}

Chen, Kai-Huang ^{[5
]}

Chen, Jung-Hui ^{[6
]}

Wang, Huei-Jruan ^{[2
]}

Chen, Wen-Jen ^{[7
]}

Zhang, Fengyan ^{[1
]}

Chen, Chao ^{[1
]}

Sze, Simon M. ^{[3
]}

机构：

[1] Xiamen Univ, Sch Energy Res, Xiamen 361000, Peoples R China

[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China

[5] Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan

[6] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 80201, Taiwan

[7] Univ Texas Austin, Austin, TX 78705 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

RRAM; set voltage; zinc oxide; concentration gradient; OXIDE; ELECTRODE;

D O I：

10.1109/LED.2014.2360525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. To analyze this method, the ITO/ZnO:SiO2/ZnOx/TiN bilayer structure was proposed and discussed. On the basis of the oxygen ions migration effect, the set voltage of the oxide-based resistive memory can be altered after a bias stress at the TiN electrode. The physical mechanism of the special resistive switching characteristics were depicted by the interaction between [O-2(-)] gradient driving force and electrical force.

引用

页码：1227 / 1229

页数：3

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