High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

被引：11

作者：

Kawashima, T ^{[1
]}

Iida, K ^{[1
]}

Miyake, Y ^{[1
]}

Honshio, A ^{[1
]}

Kasugai, H ^{[1
]}

Imura, M ^{[1
]}

Iwaya, M ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Century COE Nano Factory 21, Tenpaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

organometallic vapor phase epitaxy; selective epitaxy; nitrides; semiconducting III-V materials; light-emitting diodes;

D O I：

10.1016/j.jcrysgro.2004.08.101

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-free and low-dislocation-density AlGaN is developed using facet-controlled technology, and does not contain any GaN layer. As a result, the density of the threading dislocations in the overgrown AlGaN is as low as 5 x 10(7) cm(-2) over the entire wafer. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：377 / 380

页数：4

共 6 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE [J].