Alloy compositional fluctuation in InAlGaN epitaxial films

被引：14
作者：
Li, DB
Dong, X
Huang, J
Liu, X
Xu, Z
Zhang, Z
Wang, Z
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 03期
关键词：
D O I：
10.1007/s00339-003-2317-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The quaternary InAlGaN films were grown by metal-organic vapor phase epitaxy (MOVPE) at various temperatures and the optical and structural properties of the quaternary films were investigated by temperature-dependent photoluminescence (PL), high-resolution X-ray diffraction (HRXRD) and high-resolution electron microscopy (HREM). The results show that the temperature-dependent PL intensity of the InAlGaN film is similar to that of the disordered alloys, which is thought to be due to local alloy compositional fluctuations (ACF) in the epilayer. HRXRD measurement reveals there are In-rich and In-poor phases in the film and HREM observation, on the other hand, demonstrates that nanoclusters formed in the epilayer. Therefore the experimental results support the existence of ACF in the epilayers.
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收藏
页码：649 / 652
页数：4
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