Comparison of experimental and Monte Carlo results of stochastic Coulomb interaction in projection beam lithography

被引：2

作者：

de Jager, PWH

Mertens, B

Munro, E

Cekan, E

Lammer, G

Vonach, H

Buschbeck, H

Zeininger, M

Horner, C

Löschner, H

Stengl, G

Bleeker, AJ

机构：

[1] TNO, Inst Appl Phys, NL-2600 AD Delft, Netherlands

[2] Munros Electron Beam Software Ltd, London SW7 4AN, England

[3] Ionen Mikrofabrikations Syst GmbH, IMS, A-1020 Vienna, Austria

[4] ASML, NL-5503 LA Veldhoven, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00390-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coulomb interaction limits the beam current for a required resolution but it can be influenced by the layout of the optical system. Therefore it is necessary to obtain design information for future charged particle lithography tools. Monte Carlo simulations are an important tool in this design. Two of these programs, COUTRAC and BOERSCH, are compared with experimental data of an Ion Projection Lithography (IPL) set-up. The results of COUTRAC are in agreement with the measurements to within 19% in case of a uniform cross-over. With an aberrated cross-over the difference increases to 126 % near the axis since the experiment showed no increase of Coulomb interaction over the inner quarter of the exposure field while both Monte Carlo models show a monotone increase to the axis.

引用

页码：617 / 620

页数：4

共 6 条

[1] BEAM INTERACTIONS IN A FOCUSED ION-BEAM SYSTEM WITH A LIQUID-METAL ION-SOURCE [J].