Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications

被引：26

作者：

Chang, Yuan-Ming ^{[1
]}

Lin, Che-Yi ^{[2
]}

Lin, Yen-Fu ^{[1
]}

Tsukagoshi, Kazuhito ^{[3
]}

机构：

[1] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[3] NIMS, WPI Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 11期

基金：

日本学术振兴会;

关键词：

TRANSISTORS; GRAPHENE; DEFECT; SCATTERING; CONTACT; MOSE2;

D O I：

10.7567/JJAP.55.1102A1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a review of recent developments in the synthesis, thickness identification, electronic properties, and possible applications of layered MoTe2 flakes. Special emphasis is made on two-dimensional (2D) MoTe2 semiconductors and the extensive research in recent years on their applications in electronics. Layered MoTe2 flakes have been the focus of substantial interest in the research community because of their fascinating characteristics, including an appropriate band gap and a simple fabrication method (exfoliation) to form layered nanomaterials. Our aim is to provide the readers an overview of layered MoTe2 flakes and to understand their properties, which may lead to their applications in micro- and nanoelectronics. (C) 2016 The Japan Society of Applied Physics

引用

页数：6

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