Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires

被引：74

作者：

Soudi, A. ^{[1
]}

Dhakal, P. ^{[1
]}

Gu, Y. ^{[1
]}

机构：

[1] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 25期

关键词：

carrier lifetime; electronic structure; II-VI semiconductors; minority carriers; nanowires; photoconductivity; photoemission; semiconductor quantum wires; surface states; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3456390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The minority carrier diffusion length, L-D, was directly measured in individual ZnO nanowires by a near-field scanning photocurrent microscopy technique. The diameter dependence of L-D suggests a diameter-dependent surface electronic structure, particularly an increase in the density of mid-band-gap surface states with the decreasing diameter. This diameter dependence of the surface electronic structure might be a universal phenomenon in wurtzite-type nanostructures, and is critical in interpreting and understanding the effects of surfaces on various material properties. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456390]

引用

页数：3

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