Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

被引:9
作者
Lee, YK
Latt, KM
Jaehyung, K
Osipowicz, T
Sher-Yi, C
Lee, K
机构
[1] Nanyang Technol Univ, Sch Appl Sci, Div Mat Engn, Singapore 639798, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Inst Microelect, Singapore 117685, Singapore
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 77卷 / 03期
关键词
ionized metal plasma; Cu; tantalum nitride; diffusion barrier; chemical vapor deposition;
D O I
10.1016/S0921-5107(00)00504-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Comparative study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-Tantalum nitride (TaN) has been investigated in the Cu(200 nm)/TaN(30 nm)/SiO2(250 nm)/Si multi-layer structure. IMP-TaN thin film shows a better metallurgical and thermal stability with IMP-Cu than CVD-Cu thin film not due to lower concentration of oxygen and carbon in Cu film, but due to the smaller grain size and lower roughness of IMP-Cu microstructure. The thermal stability was evaluated by electrical measurements, X-ray diffraction (XRD) and RES. As a main part of the studies, the atomic intermixing, new compound formation, and phase transitions in the test structure were also studied. For the comparison of IMP and CVD deposited Cu and their effect on the IMP-TaN diffusion barrier, atomic force microscopy (AFM), SIMS, XRD and Rutherford backscattering spectroscopy (RBS) were employed in conjunction with electrical measurements. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:282 / 287
页数:6
相关论文
共 12 条
[1]  
ABELFOTOH MO, 1991, PHYS REV, V44, P742
[2]   MULTICARRIER TRAPPING BY COPPER MICROPRECIPITATES IN SILICON [J].
BRONIATOWSKI, A .
PHYSICAL REVIEW LETTERS, 1989, 62 (26) :3074-3077
[3]   CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR IC METALLIZATION - PRECURSOR CHEMISTRY AND MOLECULAR-STRUCTURE [J].
DOPPELT, P ;
BAUM, TH .
MRS BULLETIN, 1994, 19 (08) :41-48
[4]   TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON - FAILURE MECHANISM AND EFFECT OF NITROGEN ADDITIONS [J].
HOLLOWAY, K ;
FRYER, PM ;
CABRAL, C ;
HARPER, JME ;
BAILEY, PJ ;
KELLEHER, KH .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5433-5444
[5]   Adhesion and reliability of copper interconnects with Ta and TaN barrier layers [J].
Lane, M ;
Dauskardt, RH ;
Krishna, N ;
Hashim, I .
JOURNAL OF MATERIALS RESEARCH, 2000, 15 (01) :203-211
[6]  
LEE YK, IN PRESS SCI SEMICON
[7]  
MOUSSAVI M, 1998, 98295 IEEE IITC
[8]   EVALUATING THE LARGE ELECTROMIGRATION RESISTANCE OF COPPER INTERCONNECTS EMPLOYING A NEWLY DEVELOPED ACCELERATED LIFE-TEST METHOD [J].
NITTA, T ;
OHMI, T ;
HOSHI, T ;
SAKAI, S ;
SAKAIBARA, K ;
IMAI, S ;
SHIBATA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :1131-1137
[9]  
ROSSNAGEL SM, 1994, J VAC SCI TECHNOL B, V12, P499
[10]  
SUN SC, 1995, 95461 IEEE IEDM