Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001)

被引：5

作者：

Arai, Hitoshi ^{[1
]}

Nohira, Hiroshi ^{[1
,2
]}

机构：

[1] Tokyo City Univ, Grad Sch Engn, Dept Elect & Engn, Setagaya Ku, Tokyo 1588557, Japan

[2] Tokyo City Univ, Dept Elect & Elect Engn, Fac Engn, Setagaya Ku, Tokyo 1588557, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

CARBIDE INTERFACE;

D O I：

10.7567/JJAP.55.04EB04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A key to improving the performance of SiC MOSFETs is to clarify the SiO2/SiC interface structure formed by thermal oxidation. We have investigated the initial stage of thermal oxidation on 4H-SiC(0001) by angle-resolved photoelectron spectroscopy. From the changes in the Si 2p(3/2) and C 1s photoelectron spectra, the changes in the chemical bonding state of the SiO2/SiC structure with the progress of thermal oxidation were observed. We also found that the intensity of C-O bonds in the case of 4H-SiC(0001) was smaller than that in the case of 4H-SiC(0001) with the same oxide thickness and that the oxidation rate of 4H-SiC(0001) is already slower than that of 4H-SiC(0001) in the early stage of oxidation. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

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