Pit formation in GaInN quantum wells

被引：243

作者：

Chen, Y

Takeuchi, T

Amano, H

Akasaki, I

Yamano, N

Kaneko, Y

Wang, SY

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

[3] Hewlett Packard Labs, Kanagawa 213, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 06期

关键词：

D O I：

10.1063/1.120853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on [<1(1)over bar 01>] planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs. (C) 1998 American Institute of Physics.

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页码：710 / 712

页数：3

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